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NTT DoCoMo, Inc. and Far EasTone Telecommunications Co., Ltd. announced today the signing of a consulting agreement under which Far EasTone will launch a W-CDMA-based 3G commercial service in Taiwan with technical support from NTT DoCoMo.

Far EasTone, Taiwan's one of the largest mobile operators, aims to introduce its W-CDMA 3G service this year. Under the consulting agreement, which will be in effect from March 23 through September 22, 2004, Far EasTone will conduct a 3G network field test and coverage optimization with the technical assistance of NTT DoCoMo engineers dispatched from Japan.

Today's announcement is a result of initiatives forged under the memorandum of understanding that NTT DoCoMo and Far EasTone signed in October 2003 to collaborate in the fields of W-CDMA third-generation and i-mode mobile phone communications.

In announcing the agreement, Dr. Keiji Tachikawa, President and CEO of NTT DoCoMo, commented, "This collaborative effort further underscores the strong partnership and close working relationship enjoyed by our two firms." Tachikawa also emphasized that "Engineering consulting provided by NTT DoCoMo and based on its strong expertise in cutting-edge W-CDMA technology will facilitate Far EasTone's successful commercial launch of W-CDMA-based service."

The Chairman of Far EastTone, Douglas Hsu said, "We are the first operator in Taiwan to introduce a full and comprehensive multimedia service over GPRS. It's an important milestone into the 3G of mobile services. We believe that FET's mobile multimedia services can provide customers with the brand new experiences to the 3G communications. Moreover, through the partnership with NTT DoCoMo, the world's first successfully launched 3G mobile service based on W-CDMA, we can leverage their technical knowledge and experience in advanced mobile multimedia service. Both parties will work closely on FET's 3G field-test and coverage optimization. These are the qualities that will propel our efforts as we strive to set the standard for the industry and move FET into the next generation of innovation and growth."